Cradle to Gate
Identity ID
3271bfbe-aca3-4ae5-93e4-c1d5c38d0998
Materials
Associated ID
325404a5-1748-4850-a30c-52280f378235
Included activities starts
Included activities ends
Description
N-type monocrystalline silicon wafers can be used in the production of photovoltaic cells. The wafer has an area of approximately 0.033 m², a thickness of 175 μm, and weighs about 17 g. The dataset includes primary raw materials, auxiliary materials, energy inputs, atmospheric emissions, and waste generated during the production process. Infrastructure such as manufacturing equipment and factory construction is excluded from the system boundary of the dataset. The life cycle inventory was compiled from multiple data sources and supplemented and adjusted based on industry statistical data, standards, and emission factor handbooks. It is assumed that the target resistivity of the N-type monocrystalline silicon wafer is 0. 6 Ω·cm, phosphorus dopant estimated according to the standard GB/T 13389-2014; monocrystalline silicon wafers are produced using high-purity polycrystalline silicon as raw material. First, a Czochralski (CZ) process is used to prepare monocrystalline silicon ingots (involving batching, crystal pulling in a monocrystalline furnace, and furnace disassembly and cooling steps). Next, the monocrystalline silicon ingot undergoes squaring processes (including cropping, squaring, lapping, and inspection). Finally, diamond wire sawing is used to slice the squared silicon ingot into wafers (including glue application, slicing, cleaning, and inspection steps).
Activity Description
The production process of monocrystalline silicon wafers includes major steps such as batching, crystal pulling in a monocrystalline furnace, furnace dismantling and cooling, cropping, squaring, lapping, bonding, slicing, cleaning, and inspection.
Process Description
This product represents one monocrystalline silicon wafer used for manufacturing photovoltaic cells. Monocrystalline silicon wafers are square-shaped slices cut from monocrystalline silicon ingots. During the crystal pulling process of the silicon material, elements such as boron, phosphorus, arsenic, or gallium are doped to form P-type or N-type silicon wafers.
Time period
2020
2026
Geography
China
Macroeconomic value
Business-as-Usual
Data validation
Yes
Technology
Current Technology
Technology comment
The production of monocrystalline silicon ingots employs the Czochralski (CZ) method, while the silicon wafer manufacturing process mainly includes three main stages: CZ monocrystalline silicon ingot growth, ingot shaping, and wafer slicing.