Cradle to Gate
Identity ID
4670a864-1ddb-4dbb-bc0b-168b65a1341d
Materials
Associated ID
4c62429c-3d5e-4b16-b12c-5060a7299122
Included activities starts
Included activities ends
Description
P-type monocrystalline silicon wafers can be used in the production of photovoltaic cells, with an area of approximately 0.044 m² and a weight of about 15.7 g. The dataset includes major raw and auxiliary materials, energy consumption, atmospheric emissions, and waste generated during the production process. Infrastructure such as manufacturing equipment for production facilities and factory construction is not included within the system boundary of the dataset. The life cycle inventory was compiled from multiple data sources, with certain data corrected and supplemented by reference to industry statistical data, standards, and emission factor handbooks. It is assumed that the target resistivity of the P-type monocrystalline silicon wafer is 1. 6 Ω·cm, boron dopant estimated according to standard GB/T 13389-2014; monocrystalline silicon wafer production uses high-purity polycrystalline silicon as raw material. Firstly, monocrystalline silicon ingots are prepared using the Czochralski (CZ) method (including charging, crystal pulling in a single crystal furnace, and furnace dismantling and cooling). Secondly, the monocrystalline ingots undergo squaring processes (including cropping, squaring, surface grinding, and inspection). Finally, square silicon ingots are sliced using diamond wire (including glue coating, slicing, cleaning, and inspection processes).
Activity Description
The production process of monocrystalline silicon wafers includes major steps such as batching, crystal pulling in a monocrystalline furnace, furnace dismantling and cooling, cropping, squaring, lapping, bonding, slicing, cleaning, and inspection.
Process Description
This product represents one monocrystalline silicon wafer used for manufacturing photovoltaic cells. Monocrystalline silicon wafers are square-shaped slices cut from monocrystalline silicon ingots. During the crystal pulling process of the silicon material, elements such as boron, phosphorus, arsenic, or gallium are doped to form P-type or N-type silicon wafers.
Time period
2021
2026
Geography
China
Macroeconomic value
Business-as-Usual
Data validation
Yes
Technology
Current Technology
Technology comment
The production of monocrystalline silicon ingots employs the Czochralski (CZ) method, while the silicon wafer manufacturing process mainly includes three main stages: CZ monocrystalline silicon ingot growth, ingot shaping, and wafer slicing.