Cradle to Gate
Identity ID
5d838074-6583-49ac-b58a-3eae4c2decf3
Materials
Associated ID
e81b122f-b7aa-4b8a-bff2-846b1a500613
Included activities starts
Included activities ends
Description
N-type monocrystalline silicon wafers can be used in the production of photovoltaic cells, with a surface area of approximately 0.044 m² and a weight of about 15.7 g. This dataset includes major raw and auxiliary materials, energy consumption, atmospheric emissions, and waste generated during the production process. Infrastructure such as manufacturing equipment and factory construction is excluded from the system boundary. The life cycle inventory was compiled from multiple data sources and partially adjusted and supplemented by referencing industry statistics, standards, and emission factor handbooks. It is assumed that the target resistivity of the N-type monocrystalline silicon wafer is 0. 6 Ω·cm, phosphorus doping estimated according to standard GB/T 13389-2014; monocrystalline silicon wafers are produced using high-purity polycrystalline silicon as raw material. First, monocrystalline silicon ingots are prepared via the Czochralski (CZ) method (including batching, crystal pulling in a single crystal furnace, and furnace dismantling and cooling). Second, the monocrystalline ingots are processed through a squaring procedure (involving cropping, squaring, lapping, and inspection). Finally, the squared silicon ingots are sliced into wafers using diamond-coated wire (including glue application, slicing, cleaning, and inspection processes).
Activity Description
The production process of monocrystalline silicon wafers includes major steps such as batching, crystal pulling in a monocrystalline furnace, furnace dismantling and cooling, cropping, squaring, lapping, bonding, slicing, cleaning, and inspection.
Process Description
This product represents one monocrystalline silicon wafer used for manufacturing photovoltaic cells. Monocrystalline silicon wafers are square-shaped slices cut from monocrystalline silicon ingots. During the crystal pulling process of the silicon material, elements such as boron, phosphorus, arsenic, or gallium are doped to form P-type or N-type silicon wafers.
Time period
2021
2026
Geography
China
Macroeconomic value
Business-as-Usual
Data validation
Yes
Technology
Current Technology
Technology comment
The production of monocrystalline silicon ingots employs the Czochralski (CZ) method, while the silicon wafer manufacturing process mainly includes three main stages: CZ monocrystalline silicon ingot growth, ingot shaping, and wafer slicing.