Cradle to Gate
Identity ID
6566e02b-e571-4d7b-b492-0903374facd8
Materials
Associated ID
4113be07-9666-459f-a235-c3293d3d55e6
Included activities starts
Included activities ends
Description
P-type monocrystalline silicon wafers can be used in the production of photovoltaic cells. The wafer has an area of approximately 0.033 m², a thickness of 175 μm, and a weight of about 17 g. The dataset includes major raw and auxiliary materials, energy consumption, atmospheric emissions, and waste generated during the production process. Infrastructure such as manufacturing equipment for production facilities and factory construction is not included within the system boundary of the dataset. The life cycle inventory was compiled from multiple data sources and partially corrected and supplemented by referring to industry statistical data, standards, and emission factor manuals. It is assumed that the target resistivity of the P-type monocrystalline silicon wafer is 1. 6 Ω·cm, boron dopant content estimated according to standard GB/T 13389-2014; monocrystalline silicon wafers are produced using high-purity polycrystalline silicon as raw material. First, a Czochralski (CZ) process is used to prepare monocrystalline silicon ingots (including batching, crystal pulling in a single crystal furnace, and furnace dismantling and cooling). Then, the monocrystalline ingot undergoes squaring processes (including cropping, squaring, surface grinding, and inspection). Finally, the squared silicon ingot is sliced into wafers using diamond-wire sawing (including glue application, slicing, cleaning, and inspection).
Activity Description
The production process of monocrystalline silicon wafers includes major steps such as batching, crystal pulling in a monocrystalline furnace, furnace dismantling and cooling, cropping, squaring, lapping, bonding, slicing, cleaning, and inspection.
Process Description
This product represents one monocrystalline silicon wafer used for manufacturing photovoltaic cells. Monocrystalline silicon wafers are square-shaped slices cut from monocrystalline silicon ingots. During the crystal pulling process of the silicon material, elements such as boron, phosphorus, arsenic, or gallium are doped to form P-type or N-type silicon wafers.
Time period
2020
2026
Geography
China
Macroeconomic value
Business-as-Usual
Data validation
Yes
Technology
Current Technology
Technology comment
The production of monocrystalline silicon ingots employs the Czochralski (CZ) method, while the silicon wafer manufacturing process mainly includes three main stages: CZ monocrystalline silicon ingot growth, ingot shaping, and wafer slicing.