LCA dataset : Single-Si wafer, Czochralski method, N-type, 182mm*182mm

Single-Si wafer, Czochralski method, N-type, 182mm*182mm

Single-Si wafer, 182mm*182mm

Unit：unitActivity Type：Consumption Mix

GWP100

Unlock

System boundary

Cradle to Consumer

Identity ID

bf9dc87a-902f-4a9c-8aa4-23221cdc8ba3

Dataset category

Materials

Associated ID

325404a5-1748-4850-a30c-52280f378235

Included activities starts

The activity starts with the production and import of "Single-Si wafer, 182mm*182mm" in this region.

Included activities ends

The activity ends with providing the "Single-Si wafer, 182mm*182mm" to the consumers of this product. Transportation is included; however, product losses during transport are negligible and therefore not included.

Description

This is a market dataset representing the consumption market in the region. It includes transportation of the product from the factory gate to consumption, with transport services calculated according to the regional transportation conditions for the product.

Activity Description

The production process of monocrystalline silicon wafers includes major steps such as batching, crystal pulling in a monocrystalline furnace, furnace dismantling and cooling, cropping, squaring, lapping, bonding, slicing, cleaning, and inspection.

Process Description

This product represents one monocrystalline silicon wafer used for manufacturing photovoltaic cells. Monocrystalline silicon wafers are square-shaped slices cut from monocrystalline silicon ingots. During the crystal pulling process of the silicon material, elements such as boron, phosphorus, arsenic, or gallium are doped to form P-type or N-type silicon wafers.

Time period

2020

2026

Geography

China,Shanxi

Macroeconomic value

Business-as-Usual

Data validation

Yes

Technology

Current Technology

Technology comment

The production of monocrystalline silicon ingots employs the Czochralski (CZ) method, while the silicon wafer manufacturing process mainly includes three main stages: CZ monocrystalline silicon ingot growth, ingot shaping, and wafer slicing.